THEORY OF FINE STRUCTURE ON THE ABSORPTION EDGE IN SEMICONDUCTORS

被引：165

作者：

ELLIOTT, RJ

LOUDON, R

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(59)90371-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：382 / 388

页数：7

共 17 条

[1]

ADAMS EN, 1956, J PHYS CHEM SOL, V1, P137

[2]

BOWDEN H, 1958, J CHEM PHYS SOLIDS, V7, P78

[3] INTERBAND MAGNETO-OPTIC EFFECTS IN SEMICONDUCTORS [J].

BURSTEIN, E ;

PICUS, GS .

PHYSICAL REVIEW, 1957, 105 (03) :1123-1125

DINGLE, RB .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 211 (1107) :500-516

[5]

ELLIOT RJ, 1957, PHYS REV, V108, P1383

ELLIOTT, RJ ;

MCLEAN, TP ;

MACFARLANE, GG .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (466) :553-565

[7]

Erdelyi A, 1953, HIGHER TRANSCENDENTA

[8]

Gross E. F., 1956, NUOVO CIM, V3, P672

[9]

KOHN W, 1955, PHYS REV, V97, P869

[10] FINE STRUCTURE OF THE HYDROGEN ATOM .3. [J].

LAMB, WE .

PHYSICAL REVIEW, 1952, 85 (02) :259-276