THE NATURE AND DISTRIBUTION OF RADIATION-INDUCED DEFECTS IN SILICON ALONG THE RANGE OF PROTONS AND ALPHA-PARTICLES

被引：4

作者：

BULGAKOV, YV

KOLOMENSKAYA, TI

KUZNETSOV, NV

SHULGA, VI

ZARITSKAYA, VA

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1981年 / 54卷 / 3-4期

关键词：

Compendex;

D O I：

10.1080/00337578108210039

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：129 / 134

页数：6

共 24 条

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[2]

Bulgakov Yu. V., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1603

[3] DISTRIBUTION OF RADIATION DEFECTS IN SILICON IRRADIATED WITH FAST CHARGED PARTICLES [J].

BULGAKOV, YV ;

KOLOMENSKAYA, TI ;

KUMAKHOV, MA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03) :591-+

[4]

BULGAKOV YV, 1967, FIZ TEKH POLUPROV, V1, P422

[5]

BULGAKOV YV, 1976, INTERACTION ATOMIC 2, P30

[6]

BULGAKOV YV, 1975, FIZ TEKH POLUPROVODN, V9, P1802

[7] CORRELATION OF PROTON DAMAGE OF SILICON WITH NEUTRON AND ELECTRON DAMAGE [J].

COLWELL, JF .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04) :239-245

[8]

Gerasimenko N. N., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1644

[9]

GERASIMENKO NN, 1972, FIZ TEKH POLUPROV, V6, P991

[10]

GORODETSKII SM, 1974, FIZ TEKH POLUPROV, V8, P667

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