THE TIN-VACANCY PAIR DEFECT IN SILICON

被引：11

作者：

DAMGAARD, S

PETERSEN, JW

WEVER, G

机构：

来源：

HYPERFINE INTERACTIONS | 1981年 / 10卷 / 1-4期

关键词：

D O I：

10.1007/BF01022005

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：751 / 757

页数：7

共 14 条

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ELKIN, EL ;

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[3] MOSSBAUER STUDY OF SN IMPURITY DEFECT STRUCTURES IN GAAS [J].

HOLM, NE ;

WEYER, G .

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[4]

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[5]

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[6] LATTICE-DYNAMICS OF SUBSTITUTIONAL SN-119M IN SILICON, GERMANIUM, AND ALPHA-TIN [J].

PETERSEN, JW ;

NIELSEN, OH ;

WEYER, G ;

ANTONCIK, E ;

DAMGAARD, S .

PHYSICAL REVIEW B, 1980, 21 (10) :4292-4305

[7] DEFECTS IN IRRADIATED SILICON - EPR OF TIN-VACANCY PAIR [J].

WATKINS, GD .

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[8]

WATKINS GD, 1974, I PHYS C SERIES, V23, P1

[9] MOSSBAUER STUDY OF A COMPLEX SN-119 IMPURITY-DEFECT IN GALLIUM-PHOSPHIDE [J].

WEYER, G ;

DAMGAARD, S ;

PETERSEN, JW ;

HEINEMEIER, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02) :K147-K149

[10] MOSSBAUER STUDY OF A COMPLEX SN IMPURITY DEFECT IN GAAS FROM IMPLANTATIONS OF RADIOACTIVE IN-119 IONS [J].

WEYER, G ;

DAMGAARD, S ;

PETERSEN, JW ;

HEINEMEIER, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (09) :L181-L183

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