IMPROVEMENT OF THE GAIN OF MOS AMPLIFIERS

被引：63

作者：

HOSTICKA, BJ

机构：

[1] Department of Electrical Engineering, Institute of Telecomunications, Swiss Federal Institute of Technology, Zurich

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 06期

关键词：

D O I：

10.1109/JSSC.1979.1051324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Techniques for improving the gain of MOS amplifiers are discussed. These techniques depend on technology used. Based on some of the design ideas presented, an experimental single stage amplifier was realized using CMOS transistor arrays which achieved gain of 3200. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1111 / 1114

页数：4

共 5 条

[1]

CARR WN, 1972, MOS LSI DESIGN APPLI

[2] POTENTIAL OF MOS TECHNOLOGIES FOR ANALOG INTEGRATED-CIRCUITS [J].

HODGES, DA ;

GRAY, PR ;

BRODERSEN, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) :285-299

[3] MOS SAMPLED DATA RECURSIVE FILTERS USING SWITCHED CAPACITOR INTEGRATORS [J].

HOSTICKA, BJ ;

BRODERSEN, RW ;

GRAY, PR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (06) :600-608

[4]

NAGEL LW, 1975, ERLM520 U CAL COLL E

[5] DESIGN CONSIDERATIONS IN SINGLE-CHANNEL MOS ANALOG INTEGRATED-CIRCUITS - TUTORIAL [J].

TSIVIDIS, YP .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) :383-391

← 1 →