AMPHOTERIC EXCITON TRAPPING BY 3D-IMPURITIES IN A2B6 SEMICONDUCTORS

被引：22

作者：

FLEUROV, VN ^{[1
]}

KIKOIN, KA ^{[1
]}

机构：

[1] IV KURCHATOV ATOM ENERGY INST,MOSCOW 123182,USSR

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 42卷 / 05期

关键词：

D O I：

10.1016/0038-1098(82)90152-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：353 / 357

页数：5

共 18 条

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