AMPHOTERIC EXCITON TRAPPING BY 3D-IMPURITIES IN A2B6 SEMICONDUCTORS

被引:22
作者
FLEUROV, VN [1 ]
KIKOIN, KA [1 ]
机构
[1] IV KURCHATOV ATOM ENERGY INST,MOSCOW 123182,USSR
关键词
D O I
10.1016/0038-1098(82)90152-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:353 / 357
页数:5
相关论文
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