THE GROWTH-BEHAVIOR OF EPITAXIAL NISI2 ISLANDS OF A-TYPE AND B-TYPE DURING THE REACTION OF NICKEL VAPOR WITH THE SI(111) SURFACE

被引：25

作者：

HESSE, D ^{[1
]}

MATTHEIS, R ^{[1
]}

机构：

[1] ACAD SCI GDR,INST PHYS TECH,O-6900 JENA,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 116卷 / 01期

关键词：

D O I：

10.1002/pssa.2211160108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：67 / 80

页数：14

共 27 条

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