VERY-HIGH-BANDWIDTH IN0.53GA0.47AS P-I-N DETECTOR ARRAYS

We have fabricated and packaged 1 x 4 arrays of In0.53Ga0.47As p-i-n photodetectors connected in a GaAs FET bias-switched, common cathode circuit. The bandwidth of the discrete (packaged) photodiodes in the arrays exceeds 11 GHz, and is 5 GHz for the packaged arrays. The on/off isolation ratio, measured by varying the gate bias on the FET bias switches, was measured between 0 and 6 GHz to be 70 dB (electrical). Bias switching times of t(sw) less-than-or-equal-to 5 ns have also been observed. The high isolation, low dark current (65-100 pA) and high quantum efficiency (60% without antireflection coating) of these detector arrays makes them useful in numerous high frequency digital and analog optical switching applications.