NEAR BAND-EDGE OPTICAL-ABSORPTION IN PURE GAAS

被引：39

作者：

HILL, DE

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 11卷 / 09期

关键词：

D O I：

10.1016/0038-1098(72)90821-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1187 / &

共 18 条

[1] THEORY OF EFFECT OF FINITE CRYSTAL SIZE ON FREQUENCIES AND INTENSITIES OF IMPURITY ABSORPTION LINES IN SEMICONDUCTORS [J].

BENDOW, B .

PHYSICAL REVIEW B, 1971, 3 (06) :1999-&

[2] NONHYDROGENIC EXCITON AND ENERGY-GAP OF GAAS [J].

BIMBERG, D ;

SCHAIRER, W .

PHYSICAL REVIEW LETTERS, 1972, 28 (07) :442-&

[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[4] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J].

GILLEO, MA ;

BAILEY, PT ;

HILL, DE .

PHYSICAL REVIEW, 1968, 174 (03) :898-&

[5]

GILLEO MA, 1970, J LUMIN, V1, P562

[6] EXCITONIC ABSORPTION COEFFICEINT IN SEMICONDUCTORS [J].

GLINSKI, RG ;

SONG, KS ;

WOOLLEY, JC .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 48 (02) :815-&

[7] LIFETIMES OF BOUND EXCITONS IN CDS [J].

HENRY, CH ;

NASSAU, K .

PHYSICAL REVIEW B, 1970, 1 (04) :1628-&

[8] LIFETIME OF EXCITONS BOUND TO NEUTRAL DONORS IN HIGH-PURITY GAAS [J].

HWANG, CJ ;

DAWSON, LR .

SOLID STATE COMMUNICATIONS, 1972, 10 (05) :443-&

[9]

PANKOVE JI, 1965, PHYS REV, V140, P2059

[10]

RASHBA EI, 1962, SOV PHYS-SOL STATE, V4, P759

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