PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY IN SAL-601 RESISTS ON A SI-SIO2-SI SUBSTRATE

被引：4

作者：

OUABBOU, A ^{[1
]}

MARTINEZ, JP ^{[1
]}

LALANNE, F ^{[1
]}

GERARD, P ^{[1
]}

BALLADORE, JL ^{[1
]}

机构：

[1] CNRS,CEMES LOE,29 RUE J MARVIG,F-31055 TOULOUSE,FRANCE

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 20卷 / 04期

关键词：

ELECTRON BEAM LITHOGRAPHY; MONTE-CARLO SIMULATION; SAL-601; RESIST; PROXIMITY EFFECTS;

D O I：

10.1016/0167-9317(93)90005-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computer software is developed for calculation of the energy density distribution in the SAL 601 resist. In the case of a point source electron beam both lateral and depth evolution of the energy deposition are determined. Simulation of a line source is then achieved. Different geometries are modelled; the equidensity energy contours are obtained. The proximity effects are studied notably for isolated lines and arrays of lines and spaces.

引用

页码：255 / 275

页数：21

共 24 条

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