PLASMA RESISTANT MODIFIED I-LINE, DEEP UV, AND E-BEAM RESISTS

被引：1

作者：

BOUSABA, JE

TRANJAN, FM

QUSHAIR, LE

DUBOIS, TD

BOBBIO, SM

JOSE, MT

NICKEL, JL

JONES, SK

DUDLEY, BW

机构：

[1] UNIV N CAROLINA,DEPT ELECT ENGN,CHARLOTTE,NC 28223

[2] CTR MICROELECTR SYST TECHNOL,RES TRIANGLE PK,NC 27709

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A | 1995年 / 18卷 / 01期

关键词：

D O I：

10.1109/95.370755

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 mu m resolution, The modification consists of directly adding the modifying compounds into the photoresist solutions, The added compounds increase the oxygen, fluorine, and chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g., polyimide, SiO2, etc.).

引用

页码：195 / 200

页数：6