ROLE OF INTERFACE STATES IN MOS SOLAR-CELLS

被引：18

作者：

KAR, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.324427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5278 / 5283

页数：6

共 19 条

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CARD, HC ;

RHODERICK, EH .

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CARD, HC ;

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APPLIED PHYSICS LETTERS, 1976, 29 (01) :51-53

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CHARLSON, EJ ;

LIEN, JC .

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[4]

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FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3597-3602

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HARRINGTON, WL ;

HONIG, RE ;

GOODMAN, AM ;

WILLIAMS, R .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :644-645

[7] POTENTIALS AND DIRECT-CURRENT IN SI-(20 TO 40 A)SIO2-METAL STRUCTURES [J].

KAR, S ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (08) :869-&

[8] DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE [J].

KAR, S .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :169-181

[9] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].

KAR, S ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+

[10]

Kar S., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P922

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