A MECHANISM TO DESCRIBE THE BASAL TWINNING OF SAPPHIRE

被引：16

作者：

CHEN, SJ ^{[1
]}

HOWITT, DG ^{[1
]}

机构：

[1] UNIV CALIF DAVIS, DEPT MECH AERONAUT & MAT ENGN, DAVIS, CA 95616 USA

来源：

ACTA METALLURGICA ET MATERIALIA | 1992年 / 40卷 / 12期

关键词：

Aluminum - Crystalline materials - Dislocations (crystals) - Shear stress - Twinning;

D O I：

10.1016/0956-7151(92)90038-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanical twinning of sapphire can be simply explained by the passage of pairs of partial dislocations of the type 1/3 [1010BAR](0001) on adjacent planes. This can occur in one of two different ways where the basal planes of oxygen and aluminum ions move as a unit to produce a macroscopic shear of 0.634. In one case a perfect mirror twin is formed and in the other the mirror twin appears only in the aluminum sublattice.

引用

页码：3249 / 3253

页数：5