POROUS ETCHING - A MEANS TO ENHANCE THE PHOTORESPONSE OF INDIRECT SEMICONDUCTORS

被引：77

作者：

ERNE, BH

VANMAEKELBERGH, D

KELLY, JJ

机构：

[1] Debye Institute, Department of Condensed Matter, Utrecht University, Utrecht, 3508 TA

来源：

ADVANCED MATERIALS | 1995年 / 7卷 / 08期

关键词：

D O I：

10.1002/adma.19950070813

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Communication: A strategy for improving the photoresponse of junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed, By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining.

引用

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页码：739 / 742

页数：4

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