AMORPHOUS-SILICON SILICON-NITRIDE THIN-FILM TRANSISTORS FABRICATED BY PLASMA-FREE (CHEMICAL VAPOR-DEPOSITION) METHOD

被引：18

作者：

KANOH, H

SUGIURA, O

BREDDELS, PA

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Heguro-ku

[2] Philips Research Laboratories, Eindhoven

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 06期

关键词：

D O I：

10.1109/55.55273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical-vapor-deposited (CVD) amorphous-silicon and silicon-nitride films have been applied, for the first time, to active layers of thin-film transistors on a glass substrate. The maximum process P temperature was 485°C. The maximum field-effect mobility and the typical on-off current ratio were more than 0.9 cm2/V-s and 106, respectively. The various advantages of applying the fully plasma-free CVD method in the amorphous-silicon thin-film transistor (a-Si TFT) process are presented. © 1990 IEEE

引用

页码：258 / 260

页数：3