ELECTRICAL TRANSPORT IN N-TYPE SEMICONDUCTING GE20BIXSE70-XTE10 GLASSES

[1] CHEMICAL BONDING IN BISMUTH TELLURIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 142 - 144

[2] Flasck R., 1972, J NON-CRYST SOLIDS, V8, P326

[3] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 285 - 292

[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[5] THE CRYSTAL STRUCTURE AND PROPERTIES OF THE GROUP-VB TO GROUP-VIIB ELEMENTS AND OF COMPOUNDS FORMED BETWEEN THEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (01) : 65 - 77

[6] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996

[7] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (06): : 1101 - 1108

[8] Pauling L, 1960, NATURE CHEM BOND, P92

[9] STATES IN GAP IN GLASSY SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296

[10] PREPARATION OF N-TYPE SEMICONDUCTING GE20BI10SE70 GLASS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 640 - 641

[1] CHEMICAL BONDING IN BISMUTH TELLURIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 142 - 144

[2] Flasck R., 1972, J NON-CRYST SOLIDS, V8, P326

[3] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 285 - 292

[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[5] THE CRYSTAL STRUCTURE AND PROPERTIES OF THE GROUP-VB TO GROUP-VIIB ELEMENTS AND OF COMPOUNDS FORMED BETWEEN THEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (01) : 65 - 77

[6] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996

[7] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (06): : 1101 - 1108

[8] Pauling L, 1960, NATURE CHEM BOND, P92

[9] STATES IN GAP IN GLASSY SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296

[10] PREPARATION OF N-TYPE SEMICONDUCTING GE20BI10SE70 GLASS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 640 - 641