ELECTRICAL BEHAVIOR OF YB ION IN PARA-TYPE AND NORMAL-TYPE INP

被引：9

作者：

SEGHIER, D ^{[1
]}

BENYATTOU, T ^{[1
]}

BREMOND, G ^{[1
]}

DUCROQUET, F ^{[1
]}

GREGOIRE, J ^{[1
]}

GUILLOT, G ^{[1
]}

LHOMER, C ^{[1
]}

LAMBERT, B ^{[1
]}

TOUDIC, Y ^{[1
]}

LECORRE, A ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB,OMC,MPA,F-22301 LANNION,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.106481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter are reported admittance spectroscopy experiments on Yb-doped p- and n-type InP grown by the synthesis method. The purpose is to give a clear understanding of the rare-earth ion electrical behavior. In p-type material, the results indicate the presence of two peaks in the conductance spectra at low temperature. The activation energies of these levels have been found to be 42 +/- 5 and 50 +/- 5 meV above the valence band. We attribute them to Mg and Yb, respectively. In n-type material, the conductance spectra present a peak at low temperature with an activation energy of 29 +/- 3 meV below the conduction band and we attribute it to Yb ion. To explain the origin of these Yb-related traps, we propose that this ion acts as an isoelectronic trap in InP.

引用

页码：983 / 985

页数：3

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