GAIN SATURATION CHARACTERISTICS OF TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS IN SHORT OPTICAL PULSE AMPLIFICATION

被引:26
作者
SAITOH, T
MUKAI, T
机构
[1] NTT Basic Research Laboratories, Musashino-shi
关键词
D O I
10.1109/3.64343
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The gain saturation characteristics of traveling-wave semiconductor laser amplifiers (TWA's) are theoretically and experimentally investigated. In the amplification of an isolated pulse whose repetition period is short compared to the carrier lifetime, the gain saturation is related through the carrier lifetime to the gain saturation in CW amplification. The saturation energy is given as the output pulse energy at which the pulse energy gain is reduced by 2.35 dB from the unsaturated value, while the signal gain in CW amplification is decreased by 4.34 dB from the unsaturated value when the output signal intensity is equal to the saturation intensity. When the output pulse energy is smaller than the saturation energy, short optical pulses can be amplified without pulse shape distortion, whereas high-energy pulses suffer from pulse shape distortion due to the temporal gain variation during the pulse duration. FWHM pulse duration variation in amplification by TWA's depends on the input pulse shape. The pulse energy gain saturation is experimentally confirmed to be independent of pulse durations and to be determined only by the pulse energy. When the pulse repetition period becomes comparable to or smaller than the carrier lifetime, the initial gain becomes smaller than the unsaturated gain value. In extremely high repetition rate pulse amplification, the saturation of the pulse energy gain is determined by the average signal power. If the input pulse energy and the repetition rate are suitably designed, TWA's can amplify ultrahigh-speed signals because they have a wide gain bandwidth.
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页码:2086 / 2094
页数:9
相关论文
共 24 条
[1]   SELF-PHASE MODULATION AND SPECTRAL BROADENING OF OPTICAL PULSES IN SEMICONDUCTOR-LASER AMPLIFIERS [J].
AGRAWAL, GP ;
OLSSON, NA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (11) :2297-2306
[2]  
[Anonymous], 1986, LASERS
[3]  
HALL KL, 1989, 1989 C LAS EL BALT
[4]   REPETITION-RATE DEPENDENCE OF GAIN COMPRESSION IN INGAASP OPTICAL AMPLIFIERS USING PICOSECOND OPTICAL PULSES [J].
HANSEN, PB ;
WIESENFELD, JM ;
EISENSTEIN, G ;
TUCKER, RS ;
RAYBON, G .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (12) :2611-2620
[5]   LOW-LOSS SINGLE POLARIZATION FIBERS WITH ASYMMETRICAL STRAIN BIREFRINGENCE [J].
HOSAKA, T ;
OKAMOTO, K ;
MIYA, T ;
SASAKI, Y ;
EDAHIRO, T .
ELECTRONICS LETTERS, 1981, 17 (15) :530-531
[6]   SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES [J].
KESLER, MP ;
IPPEN, EP .
APPLIED PHYSICS LETTERS, 1987, 51 (22) :1765-1767
[7]   PULSE-COMPRESSION MECHANISMS IN SEMICONDUCTOR-LASER AMPLIFIERS [J].
LOWERY, AJ .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1989, 136 (03) :141-146
[8]  
MARSHALL IW, 1988, 8TH C LAS EL AN
[9]  
MUKAI T, 1983, REV ELEC COMMUN LAB, V31, P340
[10]   GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS [J].
MUKAI, T ;
YAMAMOTO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) :1028-1034