POTENTIAL DISTRIBUTION OF AN INHOMOGENEOUSLY DOPED MIS ARRAY

被引:8
作者
CHANG, WH [1 ]
LEE, HS [1 ]
机构
[1] IBM,SYST PROD DIV,BURLINGTON LAB,ESSEX JUNCTION,VT 05452
关键词
D O I
10.1147/rd.181.0047
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:47 / 52
页数:6
相关论文
共 6 条
[1]   MIS ARRAY POTENTIAL CALCULATION [J].
CHANG, WH .
SOLID-STATE ELECTRONICS, 1973, 16 (04) :491-496
[2]   PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].
HOFSTEIN, SR ;
WARFIELD, G .
SOLID-STATE ELECTRONICS, 1965, 8 (03) :321-+
[3]   COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J].
KENNEDY, DP ;
OBRIEN, RR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :95-&
[4]   IMPLANTED-BARRIER 2-PHASE CHARGE-COUPLED DEVICE [J].
KRAMBECK, RH ;
WALDEN, RH ;
PICKAR, KA .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :520-&
[5]   DETERMINATION OF LAPLACE-POISSON DOMAIN INTERFACE WITHIN SEMICONDUCTOR DEVICES [J].
MAGOWAN, JA ;
RYAN, WD ;
ARMSTRON.A .
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1970, 117 (05) :921-&
[6]  
Wasserstrom E., 1970, Bell System Technical Journal, V49, P853