LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION

[1] BALIGA BJ, 1976, DEC IEEE INT EL DEV, P495

[2] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[3] CORBETT JW, 1966, ELECTRON RADIATION D

[4] EVWARAYE AO, 1976, FAL M EL SOC LAS VEG

[5] GENTRY FE, 1964, SEMICONDUCTOR CONTRO

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[7] A 2 LEVEL MODEL FOR LIFETIME REDUCTION PROCESSES IN NEUTRON IRRADIATED SILICON AND GERMANIUM [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 88 - +

[8] ELECTRON-IRRADIATION INDUCED RECOMBINATION CENTERS IN SILICON-MINORITY CARRIER LIFETIME CONTROL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 814 - 818

[9] SCOUR JR, 1975, IEEE T NUCL SCI, V22, P2656

[10] VITMAN RF, 1975, SOV PHYS SEMICOND+, V9, P220

[1] BALIGA BJ, 1976, DEC IEEE INT EL DEV, P495

[2] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[3] CORBETT JW, 1966, ELECTRON RADIATION D

[4] EVWARAYE AO, 1976, FAL M EL SOC LAS VEG

[5] GENTRY FE, 1964, SEMICONDUCTOR CONTRO

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[7] A 2 LEVEL MODEL FOR LIFETIME REDUCTION PROCESSES IN NEUTRON IRRADIATED SILICON AND GERMANIUM [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 88 - +

[8] ELECTRON-IRRADIATION INDUCED RECOMBINATION CENTERS IN SILICON-MINORITY CARRIER LIFETIME CONTROL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 814 - 818

[9] SCOUR JR, 1975, IEEE T NUCL SCI, V22, P2656

[10] VITMAN RF, 1975, SOV PHYS SEMICOND+, V9, P220