SIMPLIFIED ANALYSIS OF BODY CONTACT EFFECT FOR MOSFET SOI

被引：18

作者：

OMURA, Y

IZUMI, K

机构：

[1] NTT, Atsugi, Jpn

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

SEMICONDUCTOR DEVICES; FIELD EFFECT -- Measurements;

D O I：

10.1109/16.2567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simplified experimental analysis of the body-contact effect and its impact on drain current reduction is carried out to clarify the relevant parameters for MOSFET/SOI design. In the experiments, body contacts in the source are distributed in a mosaic configuration. The empirical relationship between drain current and the number of body contacts is obtained. The relationship suggests that there must be a sufficient number of body contacts to suppress the kink effect to avoid reduction in drain current.

引用

页码：1391 / 1393

页数：3