HIGH-FIELD GALVANOMAGNETIC PROPERTIES OF AUAL2, AUGA2, AND AUIN2

被引:21
作者
LONGO, JT
SCHROEDER, PA
SELLMYER, DJ
机构
[1] Department of Physics, Michigan State University, East Lansing
[2] Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge
[3] Science Center, North American Rockwell Corp., Thousand Oaks, CA
来源
PHYSICAL REVIEW | 1969年 / 182卷 / 03期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRev.182.658
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Measurements of the magnetoresistance and Hall voltage have been made in the high-field region on the metallic fluorite compounds AuAl2, AuGa2, and AuIn2. The results have been compared with those expected from the nearly-free-electron (NFE) model. These compounds are uncompensated. The magnetoresistance measurements in principal planes and directions, with one exception, support the NFE model, but the dimensions of the two-dimensional areas of aperiodic open orbits show pronounced deviations. Hall-effect measurements for B in the 100 and 111 directions indicate significant departures of the real Fermi surface from the NFE model. A proposed empirical model gives much better agreement with Hall-effect, magneto-resistance, and de Haas-van Alphen measurements. In the best AuGa2 crystal, magnetoresistance whiskers have been observed and classified in some detail. The magnetoresistance has been calculated for B in the {100} plane, assuming a constant relaxation time and a model of the fourth electron zone with a topography similar to the NFE Fermi surface. © 1969 The American Physical Society.
引用
收藏
页码:658 / +
页数:1
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