PRESSURE-DEPENDENCE OF PHOTO-LUMINESCENCE OF N-INP

被引：8

作者：

KOBAYASHI, T

TEI, T

AOKI, K

YAMAMOTO, K

ABE, K

机构：

来源：

JOURNAL OF LUMINESCENCE | 1981年 / 24-5卷 / NOV期

关键词：

D O I：

10.1016/0022-2313(81)90287-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：347 / 350

页数：4

共 8 条

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[2]

KOBAYASHI T, 1979, PHYSICS SEMICONDUCTO

[3]

KOBAYASHI T, 1980, MEMOIRS FACULTY ENG, V26

[4]

KOBAYASHI T, UNPUB J PHYS C

[5] PRESSURE-DEPENDENCE OF THE DIRECT ABSORPTION-EDGE OF INP [J].

MULLER, H ;

TROMMER, R ;

CARDONA, M ;

VOGL, P .

PHYSICAL REVIEW B, 1980, 21 (10) :4879-4883

[6] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .2. HYDROSTATIC-PRESSURE DEPENDENCE [J].

OLEGO, D ;

CARDONA, M ;

MULLER, H .

PHYSICAL REVIEW B, 1980, 22 (02) :894-903

[7] PRESSURE EFFECTS ON THRESHOLD FOR HIGH-FIELD INSTABILITIES IN INP [J].

PITT, GD ;

VYAS, MKR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :138-146

[8] HIGH-PRESSURE PHOTO-LUMINESCENCE AND RESONANT RAMAN STUDY OF GAAS [J].

YU, PY ;

WELBER, B .

SOLID STATE COMMUNICATIONS, 1978, 25 (04) :209-211

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