SI(111)-ROOT-3X-ROOT-3R30-DEGREES-SI MEDIATED BY HYDROGEN DESORPTION

被引：21

作者：

MORITA, Y ^{[1
]}

MIKI, K ^{[1
]}

TOKUMOTO, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

SURFACE SCIENCE | 1993年 / 298卷 / 01期

关键词：

D O I：

10.1016/0039-6028(93)90068-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A scanning tunneling microscopy (STM) study was carried out for a structural change of the Si(111) surface induced by the desorption of hydrogen (H-) atoms from hydrogenated Si-clusters on a Si(111)-1 x 1 : H surface. After the complete desorption of the H-atoms, a new surface reconstruction of square-root 3 x square-root 3 R30-degrees: Si was found near 535-degrees-C, which is characterized by the Si-adatom arrangement at T4 sites on the Si(111)-1 x 1 surface. The appearance of this reconstruction can be explained by the redistribution of Si-adatom from the Si-clusters on Si(111)-1 x 1 surface during H-desorption.

引用

页码：L163 / L168

页数：6

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