EVALUATION OF THE MINORITY-CARRIER DIFFUSION LENGTH BY MEANS OF ELECTRON-BEAM-INDUCED CURRENT AND MONTE-CARLO SIMULATION IN ALGAAS AND GAAS P-I-N SOLAR-CELLS

被引：12

作者：

GRUNBAUM, E

NAPCHAN, E

BARKAY, Z

BARNHAM, K

NELSON, J

FOXON, CT

ROBERTS, JS

HOLT, DB

机构：

[1] TEL AVIV UNIV, FAC ENGN, DEPT PHYS ELECTR, IL-69978 RAMAT AVIV, ISRAEL

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, DEPT MAT, LONDON SW7 2BZ, ENGLAND

[3] TEL AVIV UNIV, SCH PHYS & ASTRON, IL-69978 RAMAT AVIV, ISRAEL

[4] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, BLACKETT LAB, LONDON SW7 2BZ, ENGLAND

[5] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND

[6] UNIV SHEFFIELD, SERC, FAC 3 5, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 05期

关键词：

D O I：

10.1088/0268-1242/10/5/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AlGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature.

引用

页码：627 / 633

页数：7

共 10 条

[1] QUANTUM-WELL SOLAR-CELLS [J].