INVESTIGATION OF MOLECULAR-BEAM EPITAXIALLY GROWN CDTE ON GAAS BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：11

作者：

WAAG, A

WU, YS

BICKNELLTASSIUS, RN

GONSERBUNTROCK, C

LANDWEHR, G

机构：

[1] Physikalisches Institut, Universität Würzburg

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 01期

关键词：

D O I：

10.1063/1.347118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy studies of CdTe-GaAs interfaces are reported. The growth start of CdTe on GaAs can be nearly stoichiometric if convenient growth parameters are chosen. The valence-band offset between these two materials is found to be large (470 meV). Cd-Te-metal-GaAs multilayers have been grown with very thin metal films. The CdTe-GaAs band offset is not influenced by such intermediary metal layers. The experimentally obtained value for the valence-band offset is compared with recent theoretical calculations taking into account interface dipoles.

引用

页码：212 / 217

页数：6

共 31 条

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