NATURE OF GRINDING-INDUCED STATES IN THE GAP IN SEMICONDUCTORS

被引：8

作者：

ARESTI, A

MANCA, P

SPIGA, A

机构：

[1] Istituto di Fisica dell'Università, Gruppo Nazionale di Struttura della Materia, C.N.R., Cagliari

来源：

CHEMICAL PHYSICS LETTERS | 1979年 / 63卷 / 01期

关键词：

D O I：

10.1016/0009-2614(79)80475-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Evidence for the existence of an extrinsic, grinding-induced, paramagnetic term, superimposed on the intrinsic ones of Langevin and van Vleck, is obtained from an observed Nμ2/kT magnetic susceptibility at low temperature in ground samples of CdS and CdSe powders. The temperature-dependent paramagnetic component is interpreted as due to singly occupied localized states in the gap whose estimated spin density is 1018-1020 cm-3. © 1979.

引用

页码：139 / 140

页数：2

共 7 条

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