SCANNING TUNNELING MICROSCOPY OF CLEAVED SI AND GAAS-SURFACES IN AIR

被引:7
作者
TANIMOTO, M
FURUTA, T
KURIYAMA, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 02期
关键词
D O I
10.1143/JJAP.28.L290
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L290 / L292
页数:3
相关论文
共 11 条
[1]   DIRECT CONTROL AND CHARACTERIZATION OF A SCHOTTKY-BARRIER BY SCANNING TUNNELING MICROSCOPY [J].
BELL, LD ;
KAISER, WJ ;
HECHT, MH ;
GRUNTHANER, FJ .
APPLIED PHYSICS LETTERS, 1988, 52 (04) :278-280
[2]  
BESCOCKE KH, 1988, J VAC SCI TECHNOL A, V6, P408
[3]   7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123
[4]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[5]   SURFACE-ROUGHNESS SCATTERING AT THE SI-SIO2 INTERFACE [J].
GOODNICK, SM ;
GANN, RG ;
SITES, JR ;
FERRY, DK ;
WILMSEN, CW ;
FATHY, D ;
KRIVANEK, OL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :803-808
[6]   OBSERVATION OF PN JUNCTIONS ON IMPLANTED SILICON USING A SCANNING TUNNELING MICROSCOPE [J].
HOSAKA, S ;
HOSOKI, S ;
TAKATA, K ;
HORIUCHI, K ;
NATSUAKI, N .
APPLIED PHYSICS LETTERS, 1988, 53 (06) :487-489
[7]   STM APPLICATIONS FOR SEMICONDUCTOR-MATERIALS AND DEVICES [J].
LIPARI, NO .
SURFACE SCIENCE, 1987, 181 (1-2) :285-294
[8]  
MAY A, 1965, SEMICONDUCTOR SURFAC, P92
[9]   SCANNING TUNNELING MICROSCOPY AND POTENTIOMETRY ON A SEMICONDUCTOR HETEROJUNCTION [J].
MURALT, P ;
MEIER, H ;
POHL, DW ;
SALEMINK, HWM .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1352-1354
[10]   DEFECT GENERATION DUE TO SURFACE CORRUGATION IN INGAASP/INP DFB LASER STRUCTURES GROWN BY MOVPE ON GRATING-FORMED INP SUBSTRATES [J].
SATO, K ;
OISHI, M ;
ITAYA, Y ;
NAKAO, M ;
IMAMURA, Y .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :825-831