LIQUID-PHASE EPITAXY OF LATTICE-MATCHED KTA1-XNBXO3 GROWN ON KTAO3 SUBSTRATE

被引：10

作者：

GUTMANN, R ^{[1
]}

HULLIGER, J ^{[1
]}

REUSSER, E ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL, INST MINERAL & PETROG, CH-8093 ZURICH, SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 126卷 / 04期

关键词：

D O I：

10.1016/0022-0248(93)90807-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Monocrystalline epitaxial layers of para- and ferroelectric KTa1-xNbxO3 (KTN) were grown from KF-KTN solution on (100) cubic KTaO3 by liquid phase epitaxy (LPE). Non-lattice-matched layers showed misfit relaxation defects at the substrate-layer interface produced by lattice relaxation. Misfit induced defects could be avoided by LPE of K1-yNayTa1-xNbxO3 (KNTN). X-ray analysis of pure and Na doped KTN layers confirmed a reduction of the lattice misfit by a factor of 4. The chemical composition of the main elements, the Na and F contents of the layers were determined by wavelength dispersive electron probe microanalysis (EPMA).

引用

页码：578 / 588

页数：11

共 20 条

[1]

BAUSER E, 1986, MATER RES SOC S P, V54, P267

[2] PRECISION LATTICE CONSTANT DETERMINATION [J].

BOND, WL .

ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818

[3] CROSSHATCHED SURFACE-MORPHOLOGY IN STRAINED III-V SEMICONDUCTOR-FILMS [J].

CHANG, KH ;

GIBALA, R ;

SROLOVITZ, DJ ;

BHATTACHARYA, PK ;

MANSFIELD, JF .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) :4093-4098

[4] OPTICAL WAVE-GUIDES IN KTA1-XNBXO3 PRODUCED BY HE ION-IMPLANTATION [J].

FLUCK, D ;

GUTMANN, R ;

GUNTER, P ;

IRMSCHER, R .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5147-5149

[5] NONLINEAR LONGITUDINAL KTN MODULATOR [J].

FOX, AJ .

APPLIED OPTICS, 1975, 14 (02) :343-352

[6]

Frankenheim ML, 1836, ANN PHYS, V37, P516

[7] AUGER-ELECTRON AND X-RAY PHOTOELECTRON-SPECTROSCOPY OF MONOCRYSTALLINE LAYERS OF KTA1-XNBXO3 GROWN BY LIQUID-PHASE EPITAXY [J].

GUTMANN, R ;

HULLIGER, J ;

HAUERT, R ;

MOSER, EM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2648-2653

[8]

GUTMANN R, 1991, CRYST PROP PREP, V32, P117

[9]

GUTMANN R, IN PRESS FERROELECTR

[10] LATTICE-CONSTANT-ADAPTABLE CRYSTALLOGRAPHICS .1. HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS AND OTHER SPECIFIC COMPOUNDS ON LATTICE-CONSTANT-ADAPTED GARNETS, SPINELS AND PEROVSKITES - A SYSTEMATIC GEOMETRICAL (NOT EXPERIMENTAL) EVALUATION [J].

HAISMA, J ;

PISTORIUS, JA ;

MATEIKA, D .

JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) :979-993

← 1 2 →