EFFECT OF HEAT TREATMENT ON GALLIUM ARSENIDE CRYSTALS .3. ELECTRICAL PROPERTIES OF THERMALLY CONVERTED P-TYPE CRYSTALS

被引：7

作者：

IKOMA, H

TOYAMA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 04期

关键词：

D O I：

10.1143/JJAP.9.376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：376 / &

共 17 条

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].

AVEN, M ;

SEGALL, B .

PHYSICAL REVIEW, 1963, 130 (01) :81-+

[2]

BEER AC, 1963, SOLID STATE PHYS S4, P195

[3] STRESS DEPENDENCE OF PHOTOLUMINESCENCE IN GAAS [J].

BHARGAVA, RN ;

NATHAN, MI .

PHYSICAL REVIEW, 1967, 161 (03) :695-&

[4] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[5] HEAT TREATMENT OF GALLIUM ARSENIDE [J].

EDMOND, JT .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1428-1430

[6] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[7] LATTICE-SCATTERING MOBILITY OF HOLES IN GERMANIUM [J].

EHRENREICH, H ;

OVERHAUSER, AW .

PHYSICAL REVIEW, 1956, 104 (03) :649-659

[8] SCATTERING OF HOLES BY PHONONS IN GERMANIUM [J].

EHRENREICH, H ;

OVERHAUSER, AW .

PHYSICAL REVIEW, 1956, 104 (02) :331-342

[9] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION [J].

FULLER, CS ;

WOLFSTIRN, KB ;

ALLISON, HW .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2873-+

[10]

HILSUM C, 1961, SEMICONDUCTING 3 5 C, P62

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