SYSTEMATIC STUDIES OF HTSC THIN-FILM GROWTH BY ICM-SPUTTERING

The Inverted Cylindrical Magnetron Sputtering (ICM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various deposition parameters including film thickness, substrate material or buffer layers. We report the growth conditions and growth quality of "1-2-3" films of different orientation with special emphasis on a-axis films which may be of interest for applications if 3-dimensional patterning is attempted. Substrate orientation and substrate temperature are the essential parameters controlling the growth orientation. High quality buffer layers (FWHM mosaic spread < 0.2-degrees, X(min) < 5% in channeling experiment) of Zr(Y)O2 could be deposited on R-plane sapphire. Critical current densities near 3 x 10(6) A/cm2 at 77 K could be achieved for the 1-2-3 films deposited on these buffer layers. Finally we report results of in situ BiSrCaCuO thin film deposition revealing first signs of channeling behaviour (X(min) almost-equal-to 60%) indicating towards epitaxial growth.