DEPOSITION OF FERROMAGNETIC METAL THIN-FILMS BY ION-BEAM SPUTTERING

被引:5
作者
ISHII, K
NAOE, M
YAMANAKA, S
机构
[1] Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, 2-12-1, Oh-okayama
关键词
D O I
10.1109/TMAG.1979.1060512
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fe, Co and Ni thin films have been prepared by ion beam sputtering method. The structure and magnetic properties of them were investigated. They were highly pure, very uniform and homogeneous. Fe and Ni films all had the same crystal structure as that of the target bulk. Co films prepared at the substrate temperature above 200°C had the f.c.c structure, while the Co target bulk had h.c.p structure. It was found that the magnetic properties depended largely on the deposition conditions. For instance, coercivity Hc increased with increase of the substrate temperature and the gas pressure in the sputtering chamber. The magnitude of Hc of the ion beam sputtered films were about 1 to 2 orders less than those of the films prepared by a conventional sputtering method. The oblique-incidence of the sputtered particles onto the substrate formed the columnar aggregates inclined from the direction normal to the film plane and produced the magnetic anisotropy in the film plane. © 1979 IEEE
引用
收藏
页码:1830 / 1832
页数:3
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