RADIATION-DAMAGE FACTOR FOR ION-IMPLANTED SILICON DETECTORS IRRADIATED WITH HEAVY-IONS

被引：25

作者：

KUROKAWA, M ^{[1
]}

MOTOBAYASHI, T ^{[1
]}

IEKI, K ^{[1
]}

SHIMOURA, S ^{[1
]}

MURAKAMI, H ^{[1
]}

IKEDA, Y ^{[1
]}

MORIYA, S ^{[1
]}

YANAGISAWA, Y ^{[1
]}

NOMURA, T ^{[1
]}

机构：

[1] UNIV TOKYO, INST NUCL STUDY, TANASHI, TOKYO 188, JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 03期

关键词：

D O I：

10.1109/23.387356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion-implanted silicon detectors were irradiated with 18-150 MeV O-16, 20 MeV Ar-40, and 53 MeV Xe-110. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2 x 10(8) cm(-2). Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies.

引用

页码：163 / 166

页数：4

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