TECHNOLOGY AND PROPERTIES OF EPITAXIAL INDIUM ARSENIDE LASERS

被引：5

作者：

BROWN, MAC

PORTEOUS, P

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1967年 / 18卷 / 11期

关键词：

D O I：

10.1088/0508-3443/18/11/303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1527 / &

共 15 条

[1]

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[6]

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[8] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

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[9] HIGH POWER CW OPERATION OF GAAS INJECTION LASERS AT 77 DEGREES K [J].

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[10] PROPERTIES OF INAS LASERS [J].

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