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PREPARATION OF THIN LAYERS OF GE AND SI BY CHEMICAL HYDROGEN PLASMA TRANSPORT
被引:210
作者
:
VEPREK, S
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physics, Czechoslovakia Academy of Sciences, Prague
VEPREK, S
MARECEK, V
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physics, Czechoslovakia Academy of Sciences, Prague
MARECEK, V
机构
:
[1]
Institute of Physics, Czechoslovakia Academy of Sciences, Prague
来源
:
SOLID-STATE ELECTRONICS
|
1968年
/ 11卷
/ 07期
关键词
:
D O I
:
10.1016/0038-1101(68)90071-3
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
It has been proved that the transport of Ge and Si in hydrogen plasma takes place under certain conditions. The transport is probably carried on by volatile hydrides of Ge and Si which are formed during the interaction of hydrogen plasma and the respective semiconductor. The semiconductor layers prepared by this method are compact and well adhesive to the substrate. When deposited on glass they had a polycrystalline structure. © 1968.
引用
收藏
页码:683 / &
相关论文
共 5 条
[1]
Devyatykh G.G., 1966, ZH NEORG KHIM+, V11, P708
[2]
Guntherschulze A., 1926, Z PHYS, V36, P563, DOI [10.1007/BF01394303, DOI 10.1007/BF01394303]
[3]
HODGMAN CD, 1955, HANDBOOK CHEMISTRY P
[4]
HURD DT, 1952, INTRODUCTION CHEMIST
[5]
HYDROGEN PLASMA TRANSPORT OF SE AS AND TE
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
CHIANG, YS
论文数:
0
引用数:
0
h-index:
0
CHIANG, YS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(2P1)
: 192
-
&
←
1
→
共 5 条
[1]
Devyatykh G.G., 1966, ZH NEORG KHIM+, V11, P708
[2]
Guntherschulze A., 1926, Z PHYS, V36, P563, DOI [10.1007/BF01394303, DOI 10.1007/BF01394303]
[3]
HODGMAN CD, 1955, HANDBOOK CHEMISTRY P
[4]
HURD DT, 1952, INTRODUCTION CHEMIST
[5]
HYDROGEN PLASMA TRANSPORT OF SE AS AND TE
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
CHIANG, YS
论文数:
0
引用数:
0
h-index:
0
CHIANG, YS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(2P1)
: 192
-
&
←
1
→