PURIFICATION AND GROWTH OF GD CRYSTALS

被引：3

作者：

CADIEU, FJ

DOUGLASS, DH

机构：

[1] Department of Physics, James Franck Institute, University of Chicago, Chicago

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.1657997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of growing large high-purity Gd single crystals has been developed utilizing a distillation chamber completely sealed by molten Gd. Resistance ratios [ρ(294 K)/ρ(4.2 K)] up to ∼160 have been attained from a starting point of ∼30 in a single distillation run with the resultant crystal grains approaching a cubic centimeter in volume. © 1969 The American Institute of Physics.

引用

页码：2376 / &