TEMPERATURE-ENHANCED ELECTRON-ATTACHMENT TO CH3CL

被引：27

作者：

DATSKOS, PG ^{[1
]}

CHRISTOPHOROU, LG ^{[1
]}

CARTER, JG ^{[1
]}

机构：

[1] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37996

来源：

CHEMICAL PHYSICS LETTERS | 1990年 / 168卷 / 3-4期

关键词：

D O I：

10.1016/0009-2614(90)85619-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The weak dissociative electron attachment to CH3Cl below ≈ 1 eV is very strongly dependent on the gas temperature; the rate constant for the process increases by 3 to 4 orders of magnitude when the temperature is increased from 300 to 750 K. © 1990.

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收藏

页码：324 / 329

页数：6

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