HOT-ELECTRON DYNAMICS IN SIO2 AND THE DEGRADATION OF THE SI/SIO2-INTERFACE

被引：29

作者：

CARTIER, E

DIMARIA, DJ

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90158-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model.

引用

页码：207 / 210

页数：4

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