ROOM-TEMPERATURE IRRADIATION OF SILICON DOPED WITH CARBON

被引：6

作者：

DAVIES, G

LIGHTOWLERS, EC

GRIFFITHS, D

WILKES, JG

机构：

[1] King's Coll London, London, Engl, King's Coll London, London, Engl

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 08期

关键词：

CARBON - HEAT TREATMENT - Annealing - RADIATION DAMAGE - SEMICONDUCTOR MATERIALS - Doping;

D O I：

10.1088/0268-1242/2/8/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature at which silicon is subjected to 'room-temperature' radiation damage is shown to determine the sequence of reactions undergone by the radiation products. For 'low'-temperature irradiation the production of interstitial carbon (C//i) atoms saturates rapidly with increasing radiation dose when only a small fraction of the carbon has been converted to C//i atoms. 'High'-temperature irradiation produces spontaneous pairing of C//i with substitutional carbon atoms. The carbon pairs trap further damage products to form a set of four perturbed centers. The transition from the 'low' temperatures occurs rapidly, e. g. between 40 and 60 degree C.

引用

页码：554 / 557

页数：4