NONDESTRUCTIVE METHOD FOR MEASURING THE SPATIAL-DISTRIBUTION OF MINORITY-CARRIER LIFETIME IN SILICON WAFER

被引:31
作者
MADA, Y
机构
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
关键词
D O I
10.1143/JJAP.18.2171
中图分类号
O59 [应用物理学];
学科分类号
摘要
[No abstract available]
引用
收藏
页码:2171 / 2172
页数:2
相关论文
共 3 条
[1]   MEASUREMENT OF LIFETIME OF CARRIERS IN SEMICONDUCTORS THROUGH MICROWAVE REFLECTION [J].
DEB, S ;
NAG, BR .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) :1604-&
[2]   MICROWAVE TECHNIQUES IN MEASUREMENT OF LIFETIME IN GERMANIUM [J].
RAMSA, AP ;
JACOBS, H ;
BRAND, FA .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :1054-1060
[3]   MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J].
STEVENSON, DT ;
KEYES, RJ .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :190-195