AUTOMATIC SWITCHING OF SUBSTRATE BIAS OR WELL BIAS IN CMOS-ICS

被引：4

作者：

GATTI, U ^{[1
]}

LIBERALI, V ^{[1
]}

MALOBERTI, F ^{[1
]}

OLEARY, P ^{[1
]}

机构：

[1] JOANNEUM RES,A-8010 GRAZ,AUSTRIA

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 17期

关键词：

Comparators (circuits); Integrated circuits; Metal-oxide-semiconductor structures and devices;

D O I：

10.1049/el:19900888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A circuit for automatic bias voltage switching in CMOS-ICs is presented. It allows the chip substrate (or the well) to be biased at the highest (or lowest) voltage, even when the input exceeds the supply. Experimental measurements on integrated samples are shown. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1381 / 1382

页数：2