CURRENT TRANSPORT IN FORWARD BIASED SCHOTTKY BARRIERS ON LOW DOPED N-TYPE INSB

被引：6

作者：

LERACH, L ^{[1
]}

ALBRECHT, H ^{[1
]}

机构：

[1] TECH UNIV MUNICH,INST TECH ELEKTR,D-8000 MUNICH 2,FED REP GER

来源：

SURFACE SCIENCE | 1978年 / 78卷 / 03期

关键词：

D O I：

10.1016/0039-6028(78)90231-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：531 / 544

页数：14

共 28 条

[1] DISTINCTION BETWEEN AVALANCHE AND TUNNELING BREAKDOWN IN ONE-SIDED ABRUPT JUNCTIONS [J].

ALBRECHT, H ;

LERACH, L .

APPLIED PHYSICS, 1978, 16 (02) :191-194

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[3] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :881-883

[4] ELECTRON-PHONON INTERACTIONS IN INSB JUNCTIONS [J].

CAVENETT, BC .

PHYSICAL REVIEW B, 1972, 5 (08) :3049-&

[5] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J].

CHANG, LL ;

HOWARD, WE .

APPLIED PHYSICS LETTERS, 1965, 7 (08) :210-&

[6]

CHANG LL, 1969, APPL PHYS LETT, V12, P89

[7] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[9] THEORY OF TUNNELING INTO INTERFACE STATES [J].

FREEMAN, LB ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1970, 13 (11) :1483-+

[10] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

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