HIGH-POWER EXTREMELY SHALLOW QUANTUM-WELL MODULATORS

被引:39
作者
GOOSSEN, KW [1 ]
CHIROVSKY, LMF [1 ]
MORGAN, RA [1 ]
CUNNINGHAM, JE [1 ]
JAN, WY [1 ]
机构
[1] AT&T BELL LABS,BREINIGSVILLE,PA 18031
关键词
D O I
10.1109/68.93874
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We find that extremely shallow quantum wells (QW's) are capable of modulating high-intensity light due to the enhanced sweep out of photogenerated carriers. These QW's are especially well suited for use in self-electrooptic effect devices (SEED's) due to the existence of a strong room-temperature exciton that ionizes rapidly with field. For a 3-mu-m-diameter spot, we obtain bistable reflectivity changes (for a symmetric-SEED arrangement using a 7 V power supply) of 18% at 1 mW (24 kW/cm2), 10% at 2 mW, and 4% at 3 mW compared to 6.8% at 0.4 mW for our previous best sample.
引用
收藏
页码:448 / 450
页数:3
相关论文
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