HALL CURRENT MEASUREMENT UNDER STRONG MAGNETIC-FIELDS FOR SILICON MOS INVERSION-LAYERS

被引：24

作者：

WAKABAYASHI, JI

KAWAJI, S

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1980年 / 48卷 / 01期

关键词：

D O I：

10.1143/JPSJ.48.333

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：333 / 334

页数：2

共 9 条

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[6]

Kawaji S, 1975, PROGR THEOR PHYS SUP, V57, P176

[7]

WAKABAYASHI J, 2 P YAM C EL PROP 2

[8] HALL-EFFECT IN SILICON MOS INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS [J].

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JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (06) :1839-1849

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