LIFETIME OF EXCITONS BOUND TO NEUTRAL DONORS IN HIGH-PURITY GAAS

被引：19

作者：

HWANG, CJ

DAWSON, LR

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 10卷 / 05期

关键词：

D O I：

10.1016/0038-1098(72)90915-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：443 / &

相关论文

共 26 条

[1] ELECTRON-HOLE EXCHANGE ENERGY IN SHALLOW EXCITONS
ABE, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (06) : 818 - &
[2] DIRECT EXCITON SPECTRUM IN DIAMOND AND ZINC-BLENDE SEMICONDUCTORS
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (06) : 373 - &
[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
BOGARDUS, EH
BEBB, HB
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &
[4] INTERVALENCE BAND TRANSITIONS IN GALLIUM ARSENIDE
BRAUNSTEIN, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 280 - 282
[5] INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMES
CARBONE, RJ
LONGAKER, PR
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (02) : 32 - &
[6] DEXTER DL, 1958, SOLID STATE PHYS, V6, P361
[7] DINGLE R, TO BE BPULISHED
[8] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[9] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &
[10] GILLEO MA, 1970, J LUMIN, V1, P562