TOTAL ACTIVE AREA SILICON PHOTODIODE ARRAY

被引：1

作者：

FLYNN, JB

EPSTEIN, JM

PALMER, DR

EGAN, JV

机构：

[1] Radiation Center, Honeywell Inc., Lexington, Mass.

[2] Solid State Electronics Center, Honeywell, Inc., Hopkins, Minn.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 10期

关键词：

D O I：

10.1109/T-ED.1969.16873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel approach is described for fabricating high resolution silicon photodiode arrays whereby virtually none of the irradiated array area is lost for interelement isolation or lead contacting requirements. Element isolation is achieved by biasing a p-v-n diode so that the depletion layer reaches a pattern of grooves etched into the side opposite the radiation. Experiments illustrating the concept feasibility on a two element array are presented as well as preliminary results on a 7X7 array having elements on centers separated by 0.013 cm. © 1969 IEEE. All rights reserved.

引用

页码：877 / &