ULTRASHALLOW, HIGH DOPING OF BORON USING MOLECULAR LAYER DOPING

被引：39

作者：

NISHIZAWA, J ^{[1
]}

AOKI, K ^{[1
]}

AKAMINE, T ^{[1
]}

机构：

[1] SEIKO INSTRUMENTS INC,TAKATSUKA UNIT,MATSUDO,CHIBA 271,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.103180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new doping method named molecular layer doping (MLD) is proposed. MLD is based on surface chemical adsorption of dissolvements from induced dopant gas molecules. Ultrashallow boron-doped layers are successfully achieved by MLD using B2 H6 gas. The p+ n junction formed by MLD exhibits excellent characteristics, with a reverse bias leakage current of less than 2.5×10-16 A/μm2 at 5 V. MLD is attractive in that it offers high-density, shallow-junction, damage-free, selective doping in a short time.

引用

页码：1334 / 1335

页数：2

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