ASYMMETRIC EFFECTS OF ELECTRON-DOPING AND HOLE-DOPING INTO THE CUO2 SQUARE LATTICE IN THE 3-BAND MODEL

被引：8

作者：

KAGA, H ^{[1
]}

SAIKAWA, T ^{[1
]}

HONBO, E ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MATH,LONDON SW7 2BZ,ENGLAND

来源：

PHYSICA C | 1990年 / 168卷 / 3-4期

关键词：

D O I：

10.1016/0921-4534(90)90534-L

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of doping electrons and holes into the two-dimensional CuO2 square lattice are studied in the three-band extended Hubbard model by means of the mean-field auxiliary-boson approach. The metal-insulator transition in the electron-doping side is shown to be different from that in the hole-doping side. Doping effects in the two sides are remarkably asymmetric being in agreement with the photoemission and absorption measurements; doping holes predominantly creates oxygen holes with very little Cu3+ ions, whereas doped electrons exclusively occupy the Cu sites yielding monovalent Cu1+ ions with some induced oxygen holes. The effective-mass ratio of the hole-doped to the electron-doped quasiparticles very close to the undoped limit is found to be m*hole/m*el ∼ 7.7, in qualitative agreement with the value ∼4.3 obtained by Sá de Melo and Doniach. © 1990.

引用

页码：391 / 404

页数：14

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