STIMULATED ELECTRONIC-TRANSITION CONCEPT FOR AN ERASABLE OPTICAL MEMORY

被引:37
作者
ALBIN, S [1 ]
SATIRA, JD [1 ]
LIVINGSTON, DL [1 ]
SHULL, TA [1 ]
机构
[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2B期
关键词
OPTICAL MEMORY; PHOTOLUMINESCENCE; STIMULATED EMISSION; STORAGE TIME; CHARGE DECAY; TUNNELING; NEURAL NETWORK;
D O I
10.1143/JJAP.31.715
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. We have investigated the properties of MgS:Eu, Sm and SrS:Eu, Sm as possible media for the SET process. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.
引用
收藏
页码:715 / 719
页数:5
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