QUANTUM-WELL, VOLTAGE-INDUCED QUANTUM-WELL, AND QUANTUM BARRIER ELECTRON WAVE-GUIDES - MODE CHARACTERISTICS AND MAXIMUM CURRENT

被引:15
作者
WILSON, DW [1 ]
GLYTSIS, EN [1 ]
GAYLORD, TK [1 ]
机构
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
关键词
D O I
10.1063/1.106193
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that finite-potential heterostructure wells, homostructure voltage-induced wells, and heterostructure barriers can act as waveguides for ballistic electrons and that waveguiding is described by a single dispersion relation and can occur at energies above all band edges. The guided mode cutoffs, electron velocity, effective mass, density of states, and ballistic current density (applicable to 2D electron gases) are presented. The maximum ballistic guided current flowing in a given direction for a 10 monolayer Ga0.75Al0.25As/GaAs/Ga0.9Al0.1As waveguide is found to be 2.3 mA per mu-m of waveguide width-allowing considerably greater currents than in single-mode quantum wires.
引用
收藏
页码:1855 / 1857
页数:3
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