OPTIMIZATION OF SILICON BIPOLAR-TRANSISTORS FOR HIGH-CURRENT GAIN AT LOW-TEMPERATURES

被引：40

作者：

WOO, JCS ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1311 / 1321

页数：11

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